FDS6679
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6679
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W -30 V Continuous Drain Current (ID):13 A 96 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 9 MΩ |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -13 A |
| Lifecycle Status | EOL (Last Updated: 2 months ago) |
| Max Power Dissipation | 1 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -1.6 V |
| Number of Channels | 1 |
| Input capacitance | 3.939 nF |
| Continuous Drain Current (ID) | 13 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 19 ns |
| Turn-Off Delay Time | 110 ns |
| Element Configuration | Single |
| Fall Time | 65 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 96 nC |
| Drain to Source Resistance | 9 mΩ |
| Nominal Vgs | -1.6 V |
| Gate to Source Voltage (Vgs) | 25 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | LIFETIME (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
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